Parameter Extraction for a Physics-Based Circuit Simulator IGBT Module
نویسندگان
چکیده
A practical parameter extraction method is presented for the Fourier-based-solution physics-based IGBT model. In the extraction procedure, only one simple clamped inductive load test is needed for the extraction of the eleven and thirteen parameters required for the NPT and PT IGBT models, respectively. Validation with experimental results from various structure IGBTs demonstrates the accuracy of the proposed IGBT model and the robustness of the parameter extraction method. * Keywords—power semiconductor modeling, IGBT, Model, Parameter extraction
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